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SiR846ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.03
10
1
T J = 150 °C
T J = 25 °C
0.02
0.02
I D = 20 A
T J = 125 °C
0.1
0.01
0.01
0.01
T J = 25 ° C
0.001
0.0
0.2
0.4 0.6 0.8 1.0
1.2
0.00
0
2 4 6 8
10
0.5
0.2
- 0.1
- 0.4
V S D - S ource-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
I D = 5 mA
200
160
120
80
V GS - G ate-to- S ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 0.7
I D = 250 μA
40
- 1.0
- 50
- 25
0
25 50 75
T J - Temperature ( ° C)
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
1000
100
10
I DM Limited
I D Limited
Single Pulse Power, Junction-to-Ambient
100 us
1 ms
1
Limited by R D S (on) *
10 ms
0.1
T A = 25 °C
S ingle Pulse
100 ms
1s
10 s
0.01
BVD SS Limited
DC
0.01
0.1
1
10
100
V D S - Drain-to- S ource Voltage (V)
* V GS > minimum V GS at which R D S (on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical support, please contact: pmostechsupport@vishay.com
Document Number: 63823
S13-0829-Rev. B, 22-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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